|Developers:||Toshiba Memory Europe (TME)|
|Date of the premiere of the system:||2018|
|Last Release Date:||2019/02/08|
The universal flash drive (UFS) — the general specification of flash drives for digital cameras, cell phones and consumer types of electronics. Use of this standard can result a flash memory in higher data transfer rate and reliability augmentation of drives, reducing at the same time market confusion and variety of adapters for a set of types of cards.
2019: Built in a flash memory of the UFS 3.0 standard
On February 8, 2019 the company Toshiba Memory Europe (TME) announced the beginning of deliveries of fact-finding samples of devices of version 3.0 with a capacity of 128 GB which is built in a flash memory of the Universal Flash Storage (UFS) standard. In the provided devices it is used 96-layer 3D - memory BiCS FLASH of the company Toshiba. Modules with a capacity of 128, 256 and 512 GB are issued. Thanks to the high speed of a read and write at low power consumption modules, according to the developer, are suitable for such systems as mobile devices smartphones, tablets and also systems added and virtual reality.
As noted in TME, thanks to the serial interface of the UFS device support the full-full duplex allowing to execute at the same time a read and write of data between the host processor and the UFS device. Creating the UFS 3.0 standard, the JEDEC association improved the previous versions of the UFS standard to help designers of devices to achieve improvement of characteristics of mobile devices and other similar systems.
The provided TME devices integrate 96-layer 3D - memory of BiCS FLASH and the controller in the body of the JEDEC standard of 11.5 x 13 mm in size. The controller executes error correction, leveling of wear, broadcast of the logical addresses in physical and control of the damaged blocks that facilitates development of systems. All three devices conform to requirements of the JEDEC UFS standard of version 3.0, including HS-GEAR4 with a theoretical speed of work of the interface to 11.6 gigabits per second to the line (23.2 Gbps for two lines) and support functions of prevention of increase in energy consumption. Speed of a consecutive read and write of the device with a capacity of 512 GB is increased approximately by 70 and 80 percent respectively in comparison with devices of Toshiba of the previous generation with a capacity of 256 GB, emphasized in TME.
NAND of the UFS 2.1 standard which is built in a flash memory
On January 29, 2018 the Toshiba Memory Europe GmbH company began deliveries of fact-finding samples of devices built-in a flash memory of NAND for the automobile systems conforming to requirements of the JEDEC UFS standard of version 2.1. Devices meet the requirements of AEC-Q100 Grade 2, have the broad range of working temperatures from-40 to +105 °C and expanded functions of reliability assurance necessary for creation of more and more complex automobile systems.
Structures of NAND which is built in a flash memory contain the crystals of NAND which are released on technology process of 15 nanometers and the controller in one body. For a broad spectrum of the automobile systems five devices of different capacity are offered: 16, 32, 64, 128 and 256 GB. They are intended for the information and entertaining systems which are usually requiring storage of large volumes of data, and wireless systems which require the small capacity of storage.
As the automobile information and entertaining systems and the expanded systems of the help to the driver (ADAS) become more difficult, also requirements to data storage devices in the automobile systems raise. The UFS specification considers requirements to high performance and density of data storage. Adding of UFS devices for the automobile systems expands the range of devices built-in a flash memory of Toshiba Memory Europe company for automotive industry in which automobile devices of the e-MMC standard are provided. Use of the UFS interface allows devices to reach the speed of consecutive reading 850 Mbps and performance of any reading 50 thousand input-output operations per second that approximately in 2.7 and 7.1 times quicker in comparison with similar e-MMC devices respectively.
Devices also have additional special functions for work as a part of the automobile systems, such as Refresh, Thermal Control and Extended Diagniosis. The Refresh function can be used for data-refresh, stored in the UFS device, and helps to increase the term of its service. The Thermal Control function protects from overheating at high temperatures which are possible in the automobile systems. Function of expanded diagnostics Extended Diagnosis helps to gain an impression about a device status.
Toshiba Memory UFS devices are used for increase in overall performance of a system in mobile devices, and emergence of UFS devices for the automobile systems, as expected, will have the same positive impact on development of the automobile information and entertaining systems and the expanded systems of the help to the driver. Toshiba Memory Corporation already conducts negotiations with the main car makers on a possibility of application of products in projects of the next generation.
UFS on the basis of 64-layer a 3D flash memory
On January 16, 2018 the Toshiba Memory Europe GmbH company announced deliveries of fact-finding samples universal a flash drives (UFS) on the basis of 64-layer a 3D flash memory of BiCS FLASH of production Toshiba Memory Corporation.
UFS drives conform to requirements to performance of systems with need of high speed of a read and write at low power consumption, including mobile devices, such as smartphones and tablets and also systems of augmented and virtual reality.
In a series four devices with a capacity of 32, 64, 128 and 256 GB are provided. All devices contain a flash memory and the controller in one body of the JEDEC standard the sizes of 11.5 x 13 mm. The controller executes error correction, leveling of wear, broadcast of the logical addresses in physical and control of the damaged blocks that facilitates development of systems.
All four devices conform to requirements of the JEDEC UFS standard of version 2.1, including HS-GEAR3 with a theoretical speed of work of the interface to 5.8 Gbps to the line (11.6 Gbps for 2 lines) without any increase in energy consumption. Performance of a consecutive read and write of the device with a capacity of 64 GB is 900 and 180 Mbps, and performance of any read and write approximately for 200 and 185% is higher in comparison with devices of the previous generation. Thanks to the serial interface of the UFS device support the full-full duplex allowing to execute at the same time a read and write of data between the host processor and the UFS device.