Angstrem: IGBT modules are bipolar transistors with an isolated gate

2018: The semi-pressing IGBT module for the power grid equipment and railway transport

On September 17, 2018 Angstrem announced development of the powerful semi-clamping IGBT module on 2500 V 2000 A for the power grid equipment and railway transport

The semi-pressing IGBT module for the power grid equipment and railway transport

Use of semi-clamping IGBT modules in the STATKOM systems (static synchronous compensators) and HVDC (high-voltage transmissions of a direct current) increase capacity of the power supply network, will improve quality of the electric power and will reduce energy transmission losses by long distances. Use of domestic devices will allow to protect national network infrastructure of electric power transmission from foreign influence as at the moment 100% of similar modules are delivered from abroad.

Development of the module was made within the agreement between JSC Angstrem and JSC Scientific and Technological Center of Federal Grid Company of the Power Pool System (JSC STC of FGC UES). The document provides development of technically difficult devices of power electronics which are now bought abroad, meanwhile the annual needs for them exceed thousands of units. First of all within the agreement creation for needs of FGC UES of the wide list of IGBT modules which are involved in processes of transportation and conversion of the electric power is planned.

Use of power IGBT modules, instead of traditionally used thyristor, provides a number of advantages, big efficiency (ease in management, high resistance to short-circuit currents) and flexibility of the systems of CTATKOM and HVDC.

In work on the semi-clamping IGBT module crystals of bipolar transistors with an isolated gate (IGBT) and the fast-recovered diodes (FRD) of original construction on voltage of 2500 V were applied. However, considering use of clamping construction, they had to be finished.

In the course the OKRA was developed the construction of the module allowing to perform evenly pressure upon crystals of IGBT and FRD. It is especially important considering the level of loading as a result of which even the small difference in uniformity of a clip of thermocompensation laying can lead to destruction of crystals. Also the problem of ensuring reliable contact in active area of crystals was solved.

Construction of the module consists from: body, submodule and cover. The submodule consists from: crystals of IGBT and FRD, molybdenic thermal compensators and the bases, copper contacts, a ceramic board with the created thickfilm resistors of a certain face value, the body of submodules, a cover of the body and the control bus crystals connected according to the circuitry of the instrument.

2017: IGBT module M2TKI-300-12

For March 29, 2017 M2TKI-300-12 - the power IGBT module, is used in electric drives, transformers, uninterruptible power supply units, the switching equipment.

Modules for voltage of 1200 V and current 300 A are provided to configurations the halfbridge, are delivered in the metal-plastic MPK-62 body.

M2TKI-300-12, (2016)

2016

A number of IGBT modules is expanded

On October 27, 2016 Angstrem IGBT/MOSFET transistors provided to consumers an expanded number of power IGBT-and FRD modules, power. Products are manufactured in Russia.

As a part of a product line more than 300 names of the modules and transistors focused on use in housing and communal services, construction and public transport.

We with pride can report that ours the company the first in the market released this commercial product which is not conceding to world analogs both on characteristics, and at the price. Separately It should be noted that it is really Russian product which for 100% is manufactured in Russia from crystal production before assembly in the body. Evgeny Kuzmin, director of the department of analog products

For November, 2016 modules in the most widespread body 34 and 62 of mm are available to consumers: MPP-34, MPP-62, MPP-62-2. All body is executed according to the international standards applied at design of power modules.

New technical processes will allow us to release products of the last generations and to be competitive in global market and not to concede to world leaders. These products will be able to block requirements not only the Russian market, but also will be demanded in the world market and will be able to compete with more eminent companies. Andrey Abramov, the deputy CEO Angstrem on strategic development and marketing

IGBT modules

Specialists of JSC Angstrem developed and released in the spring of 2016 completely domestic power IGBT modules used in management systems for engines of trams, trolleybuses and also the utility equipment - lift and welding.

The main consumers of power modules on the basis of bipolar transistors with an isolated gate (IGBT) and the fast-recovered diodes (FRD) are producers of public transport on electric draft and also the companies exploiting him. Besides, a huge number of IGBT modules is used in the field of housing and public utilities (the lift equipment, systems water - and heat supplies) and power. All these industries have the high social importance, and therefore cannot uncontrollable increase cost on the goods and services. However it is impossible in conditions when the most part of component parts and spare parts is made on the basis of foreign deliveries.

In JSC Angstrem the program of replacement of import crystals for production of power modules was begun. At the first stage were developed and the serial release of crystals is adjusted, and on the following the release of self-produced completely domestic power modules is started: IGBT and FRD modules. Their distinctive feature from foreign analogs is the increased resistance to short circuit (up to 50 microseconds) and also existence of "soft" characteristics that is uncharacteristic for modules of this generation.

According to the director of the department of sales of power electronics of JSC Angstrem Evgeny Kuzmin, it is not just the business project, and socially important task: "Today nearly 100% of the power modules used in municipal services and electric public transport, foreign production. Any jump of currency value leads to their considerable rise in price. The enterprises cannot work to themselves at a loss, and, so are forced to shift these costs for consumers. The cost of domestic IGBT modules will not be so strictly tied to currency fluctuations".

Starting design, developers were guided by the most mass in application power IGBT and FRD modules. The wide line of modules with the voltage range from 600B to 1700B and the maximum currents from 75A to 600A having different configurations is available to the order: halfbridge, chopper (lower or upper), single key, three-phase halfbridge. Consumers can select from four types of the body: SEMITRANS2, SEMITRANS3, SEMITRANS4 and ECONOPACK3. In plans of the company expansion of a range of the released execution types.