Toshiba DF series

DFxxxxxxx is a line of TVS diodes for high-speed interfaces.

2018: DF2B7ASL

The Toshiba Electronics Europe company provided the symmetric DF2B7ASL diode for protection against electrostatic discharges (ESD) intended mainly for protection of interfaces in the devices requiring the minimum area of installation.

Supercompact symmetric DF2B7ASL diode

DF2B7ASL has characteristic of the charge storage diode and can provide the low tension of restriction that in combination with the low dynamic resistance of the diode allows to achieve high efficiency of protection of semiconductor ICs against a static electricity, claim in Toshiba. The diode is issued in the supercompact body and is intended for systems requiring the minimum area of installation including interfaces of smartphones, wearable devices and devices with self-contained supply.

Low dynamic resistance, only 0.2 Ohms, and low tension of restriction of VC, only 11 V at the signal level of 5 V (VRWM ≤ 5.5 V), are combined in the DF2B7ASL diode with maximum voltage of electrostatic discharge of ±30 kV according to requirements of IEC61000-4-2 (contact discharge).

For the purpose of decrease in the required area for installation diodes of Toshiba are issued in the SOD-962 (SL2) body which installation on a payment requires the area only 0.32 mm x 0.62 mm in size.

2016: DF2B5M4SL, DF2B6M4SL, DF10G5M4N и DF10G6M4N

On September 12, 2016 the Toshiba company provided the DF2B5M4SL, DF2B6M4SL, DF10G5M4N and DF10G6M4N TVS diodes intended for protection of high-speed interfaces.

Growth of volumes of traffic of data connected with distribution of smartphones, portable devices, systems of virtual reality and devices of Internet of Things (IoT) is connected with use of a large number of high-speed interfaces which needs protection against electrostatic discharges (ESD).

The DF2B5M4SL diode in the body, (2016)

For the solution of this task the Toshiba Electronics Europe company released diodes for protection against electrostatic discharges on the basis of technology process for production of matrixes of protective diodes (EAP-IV) of the 4th generation in which own manufacturing techniques of charge storage diodes are used.

DF2B5M4SL, DF2B6M4SL, DF10G5M4N and DF10G6M4N provide protection of high-speed interfaces, including in systems with USB interfaces 3.1. Different operating voltages (3.6 and 5.5 V) and the body (SOD962 and DFN10) provide flexibility when implementing protection against electrostatic discharges in different projects.

By means of technology process of Toshiba company these four devices combine the low capacity, low dynamic resistance and resistance to influence of electrostatic discharges. Ultralow capacity (0.2 pF) guarantees the minimum signal distortion at high-speed data transmission, and the standard dynamic resistance of RDYN = 0.5 Ohms provides low bias voltages. Devices provide protection: according to requirements of IEC61000-4-2 protection against electrostatic discharges with tension not less than ±20 kV is guaranteed.

DF2BxM4SL devices are intended especially for installation on payments with a high density of components as the SOD-962 body requires space only 0.62 mm x 0.32 mm in size and can take place near the ICs requiring protection against electrostatic discharges.

For DF10GxM4N devices the DFN10 body can be placed on top the 4-bit bus. Such end-to-end construction helps to simplify distributing of buses on printed circuit boards as additional branches for connection of separate TVS diodes are not required.