| Developers: | Samsung Electronics |
| Date of the premiere of the system: | 2017/09/27 |
| Last Release Date: | January, 2019 |
| Branches: | Electrical equipment and microelectronics |
| Technology: | Processors, DWH |
Content |
Samsung Embedded Universal Flash Storage (eUFS) is the integrated technology of data storage in automobile devices.
2019: Production of terabyte chips for smartphones
At the end of January, 2019 Samsung Electronics announced start of serial production as the company claims, chips of memory of Embedded Universal Flash Storage (eUFS) 2.1 with a capacity of 1 Tbyte, the first in the market. They are held for use in smartphones, tablets and other portable electronics.
The new module eUFS 2.1 which Samsung began to manufacture at the enterprise at the Pyeongtaek plant in South Korea is executed on technology V-NAND flash memory with 16 layers and uses the corporate controller thanks to which the South Korean producer says high high-speed performance of memory. The physical sizes of a product are 11.5 x 13 mm.
The terabyte module eUFS 2.1 has the speed of consecutive data reading in 1000 MB/s, and record can be performed at a speed up to 260 MB/s.
The indicator of IOPS (input-output transactions per second) reaches 58 thousand at any data reading and to 50 thousand at any record.
Samsung notes that 1 Tbyte is approximately in 20 times more 64 Gbytes of memory which can be met in many smartphones by the beginning of 2019. Such capacity can play a crucial role in that mobile devices of the next generation became even closer to notebooks, the press release says.
At the time of the announcement of serial production of terabyte eUFS 2.1 chips they are issued in a limited number, and increase in volumes production is planned on the first half of 2019. Samsung does not doubt high demand on this product.[1]
It is supposed that the drive eUFS 2.1 with a capacity of 1 Tbyte will find application in the flagman Samsung Galaxy S10 smartphone which presentation will take place on February 20, 2019. By hearsay, the gadget will also receive up to 12 Gbytes of RAM.
2017: Use in automobile electronics
On September 26, 2017 Samsung Electronics announced use of the built-in solution Universal Flash Storage (eUFS) in automobile devices.
The eUFS technology will be issued in two versions: 128 GB and 64 GB. The device is intended for the modern systems of the help to the driver (ADAS), meter panels, the information and entertaining systems which will allow drivers and passengers to use complex functions of attached devices[2].
Memory of eUFS is created on the basis of the latest version of the UFS standard (JEDEC UFS 2.1). 128 GB of eUFS can read out data with speed up to 850 Mbps. High speed of any reading allows to increase performance of the automobile information and entertaining systems in terms of high-quality management of audiocontent, speeds of reaction of navigation aids, an information access about a situation on roads and a weather forecast via the Internet, improvements of processing of the voice commands given via the wireless headset and accelerations of interaction with social networks from back passenger seats.
The solution eUFS supports effective and reliable processing of errors that is important for the automobile information and entertaining systems. Acting on the basis of the MIPI UniPro protocol, memory of eUFS allows to detect and compensate input-output errors at the hardware level without attraction of the basic software or reset of a system.
Samsung eUFS supports modern update handler functions of data and notifications on temperature. Modern update handler function of data allows to select methods of updating and provides to management systems of the basic device information on the updated device, frequency and the course of updating. It provides optimal reliability of data that is very important for the automobile systems.
The temperature sensor is integrated into the Samsung eUFS controller, it allows to control device temperature effectively. Such mechanism of control does not allow memory of eUFS to exceed upper and lower temperature limits therefore cells of NAND can function in severe temperature conditions in the car.
Notes
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