Toshiba Universal Flash Drives (UFS)

White Paper: Storage

Universal Flash Drive (UFS) - a general specification of flash drives for digital cameras, cell phones and consumer electronics. Using this standard can lead to higher data transfer rates and increased reliability of flash memory drives, while reducing the market confusion and variety of adapters for many types of cards.

2022

Embedded MIPI M-PHY v5.0 UFS Flash Drives

On February 24, 2022 , KIOXIA Europe GmbH announced the start of deliveries of samples of integrated universal flash drives (UFS) supporting MIPI M-PHY v5.0. The devices are based on the proprietary three-dimensional flash memory BiCS FLASH, available in three versions: 128, 256 and 512 GB. The drives are designed for use in mobile devices, including advanced smartphones, and provide fast read and write speeds.

KIOXIA drives comply with the MIPI M-PHY 5.0 generation UFS standard, which assumes a theoretical interface speed of up to 23.2 Gb/s per track (two tracks - 46.4 Gb/s) in HS-Gear5 mode. This allows you to achieve an increase in the speed of serial reading and writing of a device with a capacity of 256 GB by about 90% and 70%, respectively, and the speed of arbitrary reading and writing - by about 35% and 60%, respectively, compared to devices of the previous generation. The UFS MIPI M-PHY v5.0 generation delivers significant performance improvements, enabling smartphones and other products to deliver more capabilities and improve end-user experience in the 5G era and beyond.

Improving UFS will increase the performance and capabilities of next-generation mobile devices - smartphones and other products, notes Axel Stoermann, vice president of memory marketing and design at KIOXIA Europe GmbH

UFS 3.1 Flash Prototypes Based on QLC Technology

On January 19, 2022, Kioxia Europe GmbH, a global manufacturer of storage solutions, announced the launch of flash memory with UFS 3.1 support based on QLC technology (Quad-Level Cell - a memory cell capable of storing 4  bits of information) of its own development. QLC technology allows you to get a sufficiently high memory density in the array, which will be in demand in solutions for which this capability is key, for example, in current smartphone models .

The first prototype (PoC) of the presented Kioxia UFS standard memory is a 512-gigabyte device that uses 1-terabit (128 GB) three-dimensional flash memory BiCS FLASH based on QLC technology. It is designed to meet the growing demands of mobile devices in terms of performance and memory density due to increased image resolution, the distribution of video with a resolution of 4K and higher, the development of  networks 5G  , etc .

"Kioxia has been developing and delivering UFS memory since 2013. Since that time, we have been working on expanding our range, and so much, at the expense of UFS memory, designed for devices and scenarios that require increased performance when outputting images. With the launch of UFS devices based on QLC technology, we will be able to offer another product that can meet the growing requirements for FLASH memory, " says Axel Stoermann, vice president of Kioxia Europe GmbH, responsible for marketing and memory engineering.

The company has already begun sending out test samples of 512-gigabyte UFS memory prototypes based on QLC technology to some of its customers - OEMs.

2021

256 GB and 512 GB flash memory embedded

On August 11, 2021, Kioxia Europe GmbH announced the start of delivery of samples of the next generation of embedded flash memory modules of the Universal Flash Storage (UFS) 3.1 standard with a capacity of 256 and 512 gigabytes (GB). These devices have become even thinner (for 256 GB devices, density data are given compared to the previous generation of Kioxia 256 GB UFS devices) and more productive than their predecessors: Flash memory in cases 0.8 mm and 1.0 mm thick provides a 30% increase in random read and random write speed by 40% (compared to the previous generation of 256/512 GB UFS memory modules manufactured by Kioxia). The UFS modules from Kioxia are constructed on the basis of high-performance memory of the fifth generation of Kioxia - FLASH 3D-flash-pamyatiBiCS - and intended for a wide range of mobile devices and decisions.

For many embedded Flash scenarios with space and power constraints, high performance and density are key parameters. Therefore, UFS is becoming an increasingly popular solution for them. As for capacity, UFS is already in much greater demand compared to e-MMS flash memory. According to the analytical company Forward Insights (source: Forward Insights 2Q21), this year 70% of global demand for UFS and e-MMC drives came from UFS, and this figure will continue to grow.

"The adoption of UFS version 3.1, thanks to our work in the JEDEC Standardization Committee, allowed us to once again expand the performance boundaries and create form factors for built-in non-volatile memory. Consistent consideration and further development of the 3D Flash memory technology BiCS FLASH, created by Kioxia, allowed not only to release a line of devices that support high speeds of random reading and writing in a thin package. Modules can be the preferred solution for a range of demanding industrial applications, "- notes vice president of Kioxia Europe GmbH for marketing and flash memory development Axel Stoermann.

The following changes are implemented in 256 GB and 512 GB UFS modules:

• random reading speed increased by 30%, and arbitrary writing - by 40%;
• Host Performance Booster (HPB) version 2 increases random read speed by using host buffer memory to store tables, convert logical addresses to physical ones; in addition, HPB version 1 provides access to data at the block level with a size of not more than 4 kilobytes, while HPB version 2 has increased this indicator, which allows further improving the random reading speed;
• for a 256 GB device, the body thickness is only 0.8 mm.

1TB UFS 3.1

On March 10, 2021, KIOXIA Europe announced the start of the supply of 1 TB embedded flash memory modules of Universal Flash Storage (UFS) version 3.1. The module is enclosed in a 1.1 mm high housing. The model uses KIOXIA BiCS FLASH 3D flash memory and provides sequential read speeds of up to 2050 MB/s and sequential write speeds of up to 1200 MB/s.

1TB UFS 3.1

According to the company, mobile devices are constantly improving, and 5G networks are ready to provide such levels of speed, scaling and complexity that they did not exist before. To take advantage of 5G - the ability to load faster and reduce time delays - requires proper performance and low power consumption. In addition, with 5G technology that simplifies and accelerates the process of storing a large amount of data on users' mobile devices, memory requirements for smartphones and demanding applications are growing. The 1TB KIOXIA UFS device provides adequate read/write speed, low power consumption, minimal application startup time, and storage capacity for 5G and other digital consumer products.

The 1 TB KIOXIA UFS drive combines flash memory BiCS FLASH 3D and a controller that fixes errors, distributes wear, converts logical addresses to physical addresses, and isolates damaged blocks.

The 1 TB UFS device also has two features:

• WriteBooster ensures proper recording speed;
• Host Performance Booster (HPB) 2.0 optimizes random read performance by using host-side memory to store logical-to-physical address conversion tables. While HPB 1.0 only allows access to 4K blocks, HPB 2.0 provides greater access.

2019

512 GB UFS Module for Automotive Systems

On November 14, 2019, Kioxia Europe announced the start of the supply of trial samples of 512 GB built-in memory for automotive systems.

As noted in, Kioxia Europe the presented UFS modules for automotive industry comply with the specification of universal flash drives JEDEC version 2.1. They have a wide range of operating temperatures (from -40 to + 105 ° C), meet the requirements of the AEC-Q100 Grade 25 and provide the reliability necessary for use in various automotive systems. The 512 GB device complements the company's existing 16, 32, 64, 128, and 256 GB series of automotive UFS modules.

Innovative solutions such as autonomous cars, functional infotainment systems, digital instrument clusters, information processing and transmission tools and ADAS solutions not only provide driver comfort, but also place increased demands on storage devices in cars, Kioxia Europe emphasized.

To meet the needs of users, KIOXIA has developed 512 GB UFS modules for the automotive industry, combining in one package 3D flash memory BiCS native Flash and a controller. Car UFS modules with a capacity of 512 GB have a number of functions designed to work as part of automotive systems, including Refresh, Thermal Control and Extended Diagnosis. Refresh can be used to update data in a UFS module and helps to extend the retention time. Thermal Control protects the device from overheating under high temperatures that can occur in automotive systems. Finally, Extended Diagnosis helps the CPU easily determine the state of the device, the manufacturer claims.

3D Memory UFS Devices BiCS FLASH for Automotive Systems

On April 5, 2019, Toshiba Memory Europe (TME) announced the start of delivery of trial samples of JEDEC UFS 2.1 embedded memory devices for automotive systems. UFS modules for automotive electronics, introduced by the company, can operate in a wide range of temperatures (from -40 to + 105 ° C), meet the requirements of the AEC-Q100 Grade2 and have the increased reliability necessary to work in various automotive systems. The series includes four devices of different capacities: 32 gigabytes (GB), 64 GB, 128 GB and 256 GB.

According to the company, the products are NAND embedded flash memory devices combining 3D memory BiCS FLASH and a controller in one FPGA package with 153 hemispherical leads. The devices have an HS-G3 interface and operate at a power supply of 3.3 V (memory core) and 1.8 V (interface).

The need for data storage in automotive systems will continue to grow as connected and autonomous vehicles are expected to generate huge amounts of data. TME's 3D memory-based UFS devices BiCS FLASH provide customers with a solution that is better suited for implementing large-capacity systems. For example, the 256 GB serial read and write speed of a device is increased by about 6 and 33 percent, respectively, compared to previous generation devices.

The performance advantages of UFS modules made them the main choice of memory for high-end and mid-range smartphones. With the increasing complexity and storage needs of automotive systems, UFS modules are expected to be the industry's preferred solution. Toshiba was the first to introduce UFS memory in 2013.

TME UFS modules for automotive systems have several additional features, such as upgrade, temperature control and advanced diagnostics, that meet the requirements for use in automotive devices. The upgrade feature can be used to update data stored in a UFS module and helps to increase the retention time. The temperature control function protects the device from overheating under conditions of high temperatures that can occur in automotive systems. Finally, Advanced Diagnostics allows users to easily determine the status of a device.

The development of automotive information and entertainment systems, advanced driver assistance systems (ADAS) and autonomous car control systems will lead to a further increase in requirements for automotive storage devices .

Deliveries of trial samples of 64, 128 and 256 GB devices have already begun, and deliveries of 32 GB devices will begin before June 2019.

UFS 3.0 Embedded Flash Memory

On February 8, 2019, Toshiba Memory Europe (TME) announced the start of delivery of trial samples of Universal Flash Storage (UFS) version 3.0 128 GB embedded flash memory devices. The presented devices use 96-layer 3D memory BiCS FLASH company Toshiba. Available in 128 GB, 256 GB, and 512 GB. Due to the high speed of reading and writing at low power consumption, the developer believes that the modules are suitable for systems such as mobile devices, smartphones, tablets, as well as augmented and virtual reality systems.

As noted in TME, thanks to the serial interface, UFS devices support full-duplex mode, which allows you to simultaneously read and write data between the main processor and the UFS device. By creating the UFS 3.0 standard, the JEDEC association has improved previous versions of the UFS standard to help device designers achieve improvements in the performance of mobile devices and other similar systems.

The devices presented by TME combine 96-layer 3D memory BiCS FLASH and a controller in a JEDEC package with a size of 11.5 x 13 mm. The controller corrects errors, levels wear, translates logical addresses into physical addresses, and manages corrupted blocks to facilitate system development. All three devices meet the requirements of JEDEC UFS version 3.0, including HS-GEAR4 with a theoretical interface speed of up to 11.6 gigabits per second per line (23.2 Gb/s for two lines) and support features to prevent power increases. The speed of sequential reading and writing of a 512 GB device is increased by about 70 and 80 percent, respectively, compared to 256 GB Toshiba devices of the previous generation, TME emphasized.

2018

UFS 2.1 NAND Built-in Flash Memory

On January 29, 2018, Toshiba Memory Europe GmbH began delivering trial samples of NAND integrated flash memory devices for automotive systems that meet the requirements of JEDEC UFS version 2.1. The devices meet the requirements of the AEC-Q100 Grade 2, have a wide range of operating temperatures from -40 to + 105 ° C and advanced reliability functions necessary to create increasingly complex automotive systems.

UFS 2.1 NAND Flash Memory (2018)

NAND integrated flash memory devices contain NAND crystals produced by a 15 nm process and a controller in one case. For a wide range of automotive systems, there are five devices of various capacities: 16, 32, 64, 128 and 256 GB. They are designed for infotainment systems, usually requiring large amounts of data, and wireless communication systems that require small storage capacity.

As automotive infotainment systems and advanced driver assistance systems (ADAS) become more complex, the requirements for storage devices in automotive systems also increase. The UFS specification takes into account the requirements for high performance and storage density. The addition of UFS devices for automotive systems extends the range of Toshiba Memory Europe integrated flash memory devices for the automotive industry, which features e-MMC automotive devices. Using the UFS interface allows devices to achieve 850 MB/s serial read speed and 50 thousand I/O per second random read performance, which is approximately 2.7 and 7.1 times faster than similar e-MMC devices, respectively.

Devices also have additional special features for working with automotive systems, such as Refresh, Thermal Control and Extended Diagnosis. The Refresh feature can be used to update data stored in a UFS device and helps to extend the life of the device. Thermal Control protects against overheating at high temperatures that are possible in automotive systems. Extended Diagnosis helps you understand the status of your device.

Toshiba Memory UFS devices are used to improve overall system performance in mobile devices, and the advent of UFS devices for automotive systems is expected to have the same positive impact on the development of automotive infotainment systems and advanced driver assistance systems. Toshiba Memory Corporation is already negotiating with major automakers about the possibility of using products in next-generation projects.

UFS based on 64-layer 3D flash memory

On January 16, 2018, Toshiba Memory Europe GmbH announced the delivery of trial samples of universal flash drives (UFS) based on 64-layer 3D flash memory BiCS FLASH manufactured by Toshiba Memory Corporation.

TME UFS BiCS 64GB (2018)

UFS drives meet performance requirements for high-speed, low-power read-write systems, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.

The series features four 32, 64, 128, and 256 GB devices. All devices contain flash memory and a controller in one JEDEC package with dimensions of 11.5 x 13 mm. The controller corrects errors, levels wear, translates logical addresses into physical addresses, and manages corrupted blocks to facilitate system development.

All four devices meet the requirements of JEDEC UFS version 2.1, including HS-GEAR3 with a theoretical interface speed of up to 5.8 Gb/s per line (11.6 Gb/s for 2 lines) without any increase in power consumption. Serial read and write performance of a 64 GB device is 900 and 180 MB/s, and random read and write performance is about 200 and 185% higher than previous generation devices. With a serial interface, UFS devices support full-duplex mode, which allows you to simultaneously read and write data between the main processor and the UFS device.