Toshiba IEGT Transistors

The injection transistor with the enriched lock (Injection-Enhanced Gate Transistor, IEGT) is the device managed by tension for switching of big currents.

2018: The body for IEGT devices

On June 13, 2018 the Toshiba Electronics Europe company provided information on the body for IEGT devices (Injection-Enhanced Gate Transistor is the Injection transistor with the enriched lock) a class of 4.5 kV in the flat package (PPI). The body is developed for the purpose of further increase in durability of devices on a gap, thereby reducing the probability of damage of surrounding components and systems in case of refusal of the device.

The body for IEGT devices from Toshiba

As noted in Toshiba company, creation of the body was result of the researches conducted for assessment of an optimal volume ratio of materials in such body. By experiments the optimal ratio at which there is neither destruction of ceramic elements, nor leak of materials was defined.

Based on careful measurements it was shown that the body can maintain 50 hours in the failure mode owing to short circuit (SFCM). The experiment was made with one short-circuited crystal of IEGT from 42, located on the edge of the module (the most adverse situation). Besides, the tests of tensile strength which are carried out in test conditions at 3200 V showed by 1.7 times big durability in comparison with standard PPI devices, emphasized in Toshiba.