Toshiba SSM series MOS transistors

2018: Toshiba SSM3K357R и SSM6N357R

On June 25, 2018 the Toshiba Electronics Europe company announced release of a series of MOS transistors with cancel circuit of effect of Miller by means of the built-in diode between outputs of a drain and a lock. The unary SSM3K357R device and dual SSM6N357R are intended for management of inductive loadings, such as mechanical relays and solenoids, requiring at the same time the minimum quantity of external components.

Unary Toshiba SSM3K357R transistor

As noted in Toshiba company, devices of series 357 protect drivers from potential damage as a result of the emissions of tension caused by the return EMF from inductive loading. They contain the built-in approving resistor, the series resistor and a stabilitron that helps to reduce quantity of external parts and to save the place on the printed circuit board.

Devices are expected maximum voltage between a drain and a source (VDSS) of 60 V and a maximum current of a drain (ID) 0.65 A. Low resistance between a drain and a source (RDS(ON)) abroach, the equal 800 megohms at VGS = 5.0 V, ensure effective functioning with the minimum heat release, specified in Toshiba.

The unary SSM3K357R transistor is issued in the body of the class SOT-23F the sizes of 2.9 mm x 2.4 mm x 0.8 mm and is intended for management of the relay and solenoids thanks to low operating voltage of 3.0 V. Certification of this device according to requirements of AEC-Q101 standard allows to apply it in the automobile systems and also in different industrial solutions.

The dual SSM6N357R transistor is issued in the class TSOP6F body the sizes of 2.9 mm x 2.8 mm x 0.8 mm that allows to use two devices on a payment, reducing the installation area for 42% in comparison with two separate devices.

SSM3K357R and SSM6N357R are already delivered by serial batches.