Samsung SSD based on a flash memory of QLC V-NAND

2018: Start of mass production of SSD with 4-bit cells

On August 10, 2018 Samsung Electronics announced start of mass production of the solid state drive (SSD) with 4-bit cells (QLC) SATA with a capacity of 4 TB intended for end consumers.

SSD with 4-bit cells from Samsung Electronics

In the provided SSD Samsung QLC V-NAND of a chip with a capacity of 1 Tbit are used. SSD have similar performance with TLC SSD. The company expects that QLC SSD Samsung will bring mass solid state drives to the top level of efficiency.

QLC SATA SSD from Samsung mark the beginning of mass transition to terabyte SSD. In process of expansion of our line of consumer and corporate QLC devices terabyte solid state drives will promptly extend on all market. to Jase of Khan, the executive vice president for sales and marketing of memory in Samsung Electronics

Using the QLC V-NAND chip with a capacity of 1 Tbit of Samsung will also be able to make more effective memory cards for smartphones with a capacity of 128 GB.

As amount of data, stored in one storage cell, increases from three bits to four, chip capacity per acre increases, and the electric charge necessary for reading information decreases by the whole 50%. With respect thereto it becomes more difficult to support the necessary capacity and speed of operation of the device.

4TB QLC SATA SSD has performance level similar to what is shown by TLC SSD. It became possible thanks to the progressive SSD controller and TurboWrite technology and also to expansion of capacity of the drive use of 32 chips based on 64-layer V-NAND design with a capacity of 1 Tbit.

The provided QLC SSD Samsung provides the speed of consecutive reading 540 Mbps and speed of consecutive record of 520 Mbps, the device is delivered with a three-year guarantee.

In 2018 Samsung is going to provide several mass QLC SSD models. Devices will receive widely used form factor 2.5 inches and capacity 1, 2 or 4 TB^[1].

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