Samsung DDR5 Supercomputer and Data Center Memory Module

Main articles:

• Storage System
• Data-processing center (data center)
• Supercomputers

2021: DDR5 Module View

Samsung Electronics on March 25, 2021 introduced the 512 GB DDR5 module based on High-K Metal Gate (HKMG) technology. DDR5 performance is more than twice that of DDR4, providing up to 7,200 megabits per second (Mbps) of bandwidth. This module is suitable for performing the most demanding tasks for computing and throughput related to supercomputers, artificial intelligence, machine learning and data analysis.

Using the HKMG process in the production of DRAM, we can offer our customers high-performance and energy-efficient memory for computers performing tasks for medical research, financial markets, autonomous driving, smart cities and other areas, "commented Young-Soo Sohn, Vice President of the DRAM Memory Planning and Support Group at Samsung Electronics.

As the amount to data move to store and process grows exponentially, the transition to DDR5 comes at a critical time for network and cloudy DPC peripheral deployments. Engineers Intel , in close collaboration with memory representatives such as Samsung, have created fast, energy-efficient DDR5 memory with optimized performance, compatible with our future processors Intel Xeon Scalable codenamed Sapphire Rapids, "said Carolyn Duran, vice president and CEO of memory and I/O technology at the company. Intel

Samsung's DDR5 will use HKMG technology, which is traditionally used in logical semiconductors and was first used in Samsung GDDR6 memory in 2018. When DRAM structures are smaller, the insulation layer becomes thinner, resulting in more current leakage. By replacing the insulator with HKMG material, Samsung's DDR5 reduces leaks and can provide higher performance. This memory will also consume about 13% less power, making it particularly suitable for data centers where energy efficiency is important.

Using vertical interconnection technology (through-silicon via, TSV), Samsung DDR5 memory combines eight layers of 16 GB DRAM chips, providing a maximum capacity of 512 GB. TSV technology was first used in DRAM in 2014, when Samsung introduced server modules with a capacity of up to 256 GB.