HBM3E 12H DRAM (Memory Chips)

2024: Product Announcement

On February 27, 2024, Samsung announced high-bandwidth memory HBM3E a new generation that is designed for use in artificial intelligence systems. The products are said to be more than 50% superior to previously released similar products in terms of data transfer rate and capacity.

Presented are HBM3E 12H DRAM chips, which are made in the form of 12-tier stacks with a total volume of 36 GB. The bandwidth reaches 1280 GB/s, which, according to Samsung, is about one and a half times more than 8-layer HBM3 chips available on the commercial market.

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Samsung

In the production of HBM3E DRAM 12H, Samsung uses thermal compression technology combined with a dielectric film. Thanks to this technique, the 12-layer articles have the same height as the 8-layer articles. In addition, the South Korean manufacturer achieved the smallest gap between memory crystals in the industry - 7 microns, and also eliminated voids between layers. As a result, the density of the vertical layout increased by more than 20% compared to 8-layer HBM3 stacks.

Another feature of the announced chips is the use of contact protrusions of different sizes between memory layers. Small protrusions are designed to transmit signals, whereas larger ones contribute to improved heat removal. This feature allows not only to increase efficiency, but also to increase the yield of good products. Thus, total production costs can be reduced. Samsung also says that the use of memory HBM3E DRAM 12H compared to 8-layer products helps to increase the learning speed of AI models by 34%, while the number of simultaneously served users increases by 11.5 times.^[1]

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