• File
• История файла
• Ссылки на файл
• Метаданные

Developers:	Moscow Polytechnic University (Mospolitech)
Date of the premiere of the system:	2021/12/28
Branches:	Electrical and microelectronics

Main articles:

• Microelectronics (Russian market)
• Microelectronics (global market)

2021: Thermal Memory Experimental Sample Development Grant

On December 28, 2021, Moscow Polytechnic University announced that it had received a grant of three million rubles from the Russian Science Foundation (RNF) to solve the fundamental scientific problem associated with the study and development of thermal memory. The result of the researchers' work should be a software and hardware complex based on metallization systems to create experimental samples of memory cells. The researchers were headed by a professor at Moscow Polytechnic University, doctor of physical and mathematical sciences Arkady Skvortsov.

As reported, the study is based on the need to create a simple, economical and efficient memory element for microelectronics based on metal-semiconductor systems capable of storing and recording bits of information. The study is carried out in the framework of the so-called thermal electronics, in which the processes of generation, distribution and detection of dynamic inhomogeneities of the thermal nature are studied. Such research is carried out as part of the Russian Science and Technology Development Strategy, which aims to "transition the country to advanced digital, intelligent production technologies, robotic systems, materials and methods of design, creating systems for processing large amounts of data, machine learning and artificial intelligence."

Within the framework of the project, it is planned to study the possibilities of using the "classical" metallization systems of semiconductor devices and structures as thermal memory cells; develop a software and hardware complex and manufacture special test structures based on metallization systems to create experimental samples of memory cells; carry out a number of experiments to study transients in such structures under impulse influence and to develop a stand for reading and writing information into such structures. Proposed method of information recording is based on transmission of heat pulse (electric pulse or laser radiation) to some volume of body.

From a practical point of view, this looks like this: a plate of silicon or gallium arsenide 1 mm thick is taken as the basis, a conductive thin film (of copper or aluminum) is applied on top of it. When a current pulse is passed through such a system, heat remains in it for some time, which is dissipated for some time. At these moments, "thermal" information is recorded. We can say that this is an analogue of an electric capacitor, only heat is used instead of current.

The updated structure has technological simplicity. You apply the film to almost any material, and the thermal memory cell is formed. In the case of electric capacity, technological difficulties may arise: it is not so easy to do. So there is technological simplicity and, accordingly, cheapness. There are many areas of activity with a lot of heat or large differences, where this device on such types of memory cell will work. As of December 2021, research is underway so that within the framework of this project the idea can be translated into a pilot sample. told by Arkady Skvortsov

История файла

Нажмите на дату/время, чтобы просмотреть, как тогда выглядел файл.

(недавние | старейшие) Просмотреть (более новых 50) (более старых 50) (20 | 50 | 100 | 250 | 500)

	Дата/время	Миниатюра	Размер объекта	Участник	Примечание
текущий	16:04, 17 май 2022		420 × 236 (47 КБ)	ArtV (вклад)

(недавние | старейшие) Просмотреть (более новых 50) (более старых 50) (20 | 50 | 100 | 250 | 500)

• Поиск одинаковых файлов
• Редактировать этот файл, используя внешнюю программу (подробнее см. в руководстве по установке)

Ссылки на файл

Метаданные

Файл содержит дополнительные данные, обычно добавляемые цифровыми камерами или сканерами. Если файл после создания редактировался, то некоторые параметры могут не соответствовать текущему изображению.

Ориентация кадра	Нормальная