Toshiba: Serial Interface NAND

Serial Interface NAND is a series of the flash storage devices SLC NAND of 24 nanometers for the built-in solutions compatible to widely used serial peripheral interface (SPI) from Toshiba company.

2019: The second generation of the solutions Serial Interface NAND with a capacity up to 8 Gbit

On September 26, 2019 the Toshiba Memory Europe company provided the second generation a flash memory of NAND for the built-in solutions which differs in the increased capacity and performance. Thanks to high data transfer rate the products Serial Interface NAND are compatible to the SPI interface and are suitable for application in a broad spectrum of consumer, industrial and communication solutions. Shipment of test samples of chips began since September, 2019, and mass production is planned for October, 2019.

In Toshiba Memory Europe noted that as dimensions of devices of Internet of Things and the sphere of communications decrease, demand for a flash memory grows in the miniature body with the small number of contacts which can provide the high speed of a read and write of data. Thanks to compatibility with the widespread SPI interface, products of the line of Serial Interface NAND can be used in quality a flash memory of SLC NAND with the small number of contacts and differ in the high capacity and the compact sizes.

According to the producer to provide high data transfer rate, the products Serial Interface NAND of the second generation differ increased (in comparison with first generation) in performance, including support of the operating frequency of 133 MHz and the program x4 mode. In addition, to meet demand for large volumes of memory, the provided line includes the solution with a capacity of 8 Gbit (1 GB). All chips are issued in the 8-contact body of a standard size of WSON dimensions 6 x 8 mm.

Main features mentioned by the producer:

• Capacity is 1 – 8 Gbit
• Page sizes of memory of 2 Kb (1/2 Gbit) and 4 Kb (4/8 Gb) for more effective reading / data writing OS
• The x4 Program and Read modes for fall forward of access and performance when programming
• Support of ECC and data protection reveals inverting of discharges and provides protection of the selected blocks
• The Parameter Page function for obtaining detailed data about the device.

"The complexity of the built-in devices and the requirement to their dimensions constantly grow therefore the flexibility and performance which the flash memory of Serial Interface NAND can provide are required for developers", 'Axel Stoermann, the vice president of Toshiba Memory Europe noted'

2015: SLC NAND of 24 nanometers

On October 21, 2015 the Toshiba Electronics Europe company provided a series of the flash storage devices SLC NAND of 24 nanometers. Among the devices using a flash memory of NAND with the serial interface:

• consumer electronics,
• TVs with flat screens,
• printers,
• wearable devices,
• products for the industry, including industrial robots.

Serial Interface NAND (2015)

As a part of a device series with a data storage density of 1 Gbit, 2 Gbit and 4 Gbit, executed in the SOP body (10.3 mm x 7.5 mm) or WSON (6.0 mm x 8.0 mm). For all combinations of the body and data storage density devices with the face value of input voltage of 1.8 or 3.3 V are issued.

Functions of high-speed consecutive reading, the inline code of error correction (ECC) with function of the message about inverting of discharge, the built-in means of protecting of data - provide quick access to data, their reliable and safe storage.

The serial peripheral interface allows to manage devices, using six outputs, providing to users access to a flash memory of high-capacity SLC NAND with small quantity of outputs in the miniature body. Memory of NAND with the serial interface has considerably with a smaller cost at one bits in comparison with the solutions on a basis a flash memory of NOR which are traditionally used for the built-in systems.

The satisfaction of the growing requirements of customers to functionality of the built-in devices requires increase in density of data storage. It leads to increase in demand for devices of memory of high capacity for storage of the software (including boot programs, microprogram providing and the built-in OS) and data (including data of magazines) therefore developers of devices switch to a flash memory of SLC NAND having the high density of data storage and high reliability.

Taking into account the operating temperature range from-40 to +85 °C of the device can be used in the majority of the household and industrial built-in solutions. Deliveries of fact-finding samples of devices in the WSON and SOP body will begin in October, 2015, and the beginning of serial production is planned for December, 2015.