| Developers: | NRNU MEPhI - National Research Nuclear University MEPhI |
| Date of the premiere of the system: | 2023/03/10 |
| Branches: | Electrical and Microelectronics |
2023: Material Creation
Employees of the Center for Radiophotonics and Microwave Technologies of NRNU MEPhI have created a radiation-resistant and temperature-stable material for magnetic field Hall sensors. The university announced this on March 10, 2023. Sensors of this type are used to control the magnetic field in nuclear and thermonuclear installations (tokamaks), they are in demand in research projects of the Mega science class, where they are subjected to strong radioactive radiation. This makes the development of innovative materials relevant that will increase the service life of measuring instruments in conditions of high radiation background.
According to the study, indium-containing semiconductor compounds - indium compounds with antimony (indium antimonide, InSb) and arsenic (indium arsenide, InAs) are the most promising materials for creating sensors that work under harsh radiation conditions. Unlike other semiconductors, the concentration of electrons in indium arsenide crystals increases when irradiated, since in this substance there are mainly radiation defects of the donor type when exposed to any type and any dose of hard radiation. Due to this property, under the influence of radiation, the electrical conductivity of the material does not decrease, but only increases over time.
Sapphire was chosen as the substrate for the indium arsenide film because it is one of the most resistant dielectric materials to ionizing radiation.
Silicon-doped indium arsenide films on sapphire substrates were obtained and examined by molecular beam epitaxy. The main problems in preparing epitaxial films on a non-native substrate are the crystal structure and lattice period different from the substrate. The obtained indium arsenide films with a thickness of 100 nm have a good mobility of 600 sm2/V·s, as well as excellent temperature stability of conductivity: the material resistance in the range of 4-320 K varies by less than 1%.
The results demonstrate the potential for implementing thermally stable InAs-based magnetic field sensors based on the Hall effect, as well as creating field effect transistors.
| The site content is translated by machine translation software powered by PROMT. The machine-translated articles are not always perfect and may contain errors in vocabulary, syntax or grammar. Read original article If you find inaccuracies or errors in the results of machine translation, please write to editor@tadviser.ru. We will make every effort to correct them as soon as possible. |