NIIET: TNG-K-series GaN transistors

2023: Announcement of mass-produced TNG-K series power transistors

On April 10, 2023, representatives of the Voronezh Research Institute of Electronic Technology announced the start of accepting orders for mass-produced TNG-K series power transistors based on gallium nitride in metal-ceramic and plastic housings.

As reported, nitride-gallium technology - for April 2023, one of the most promising and rapidly developing directions in power and microwave electronics in the world. The reason for this lies in the properties of gallium nitride, which surpasses silicon traditional for the semiconductor industry in a number of key parameters, such as band gap, critical field strength and drift rate of electron saturation. Thanks to this, GaN transistors can operate at higher temperatures, at higher frequencies, with higher power density and energy efficiency than silicon ones.

GaN transistors of the TNG series

NIIET has been developing this area for more than 10 years, and in February 2021 the institute announced the availability of test samples of GaN transistors of the TNG-K series, designed to work as keys in chargers of consumer electronics, electric vehicles, energy converters of alternative sources and power supply schemes of equipment for various purposes. The series included five types of devices (TNG-K 10030, TNG-K 20040, TNG-K 20020, TNG-K 45020, TNG-K 45030) in KT-94 ceramic metal buildings.

One of the possibilities of the series is that these transistors are normally closed. This optimizes the gate driver circuitry since devices of this type do not require negative bias at the gate to bring the transistor into a closed state. Combined with the fact that nitride-gallium transistors, operating at higher switching frequencies, allow the use of smaller capacitors in the designs of pulse power supplies capacity, simpler control circuitry makes it possible to significantly reduce the dimensions of the device while maintaining its energy parameters. This is also facilitated by the efficiency values ​ ​ of GaN transistors, in the case of the TNG-K series reaching 97-98%.

GaN transistors of the TNG series

Now transistors of the TNG-K series are available for ordering. The company mastered the serial production of these devices in both cermet and plastic cases, and over the past time, NIIET specialists have managed to increase the breakdown voltage of the drain-source devices to 900 V, while this parameter in this series was initially limited to 450 V.

We have already shown how effective nitride-gallium technology can be when creating power electronics devices using the example of our chargers: 95 W power is achieved in the dimensions of a conventional charge for a car cigarette lighter. The range of TNG-K transistors is very wide. noted Vladimir Maleev, Commercial Director of NIIET JSC