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2026: Development of a laser-plasma X-ray lithograph for the production of microelectronics
In February 2026, at the Institute of Microstructure Physics of the Russian Academy of Sciences (branch of the Russian Academy of Sciences named after A.V. Gaponov-Grekhov), an experimental stand was presented, which is a prototype of a laser-plasma source for a new generation industrial X-ray lithograph. The plant operates at a wavelength of 11.2 nm and is designed to develop key technological solutions.
According to the publication "Scientific Russia," the created stand includes the main components of the future source: a supersonic nozzle with a xenon supply and pumping system, a solid-state laser equipped with a focusing system, as well as an X-ray collector. To study the parameters, the plant is equipped with diagnostic equipment.
RussiaDuring the tests, significant results were obtained. The researchers were able to realize a discharge with a radiating region of 150x400 μm. The conversion factor of laser radiation to X-ray radiation reached about 3%, which is sufficient for practical use in industrial equipment.
The experiments confirmed the advantage of using xenon as a working medium. Unlike tin targets used in ASML lithographs, the xenon source does not generate a stream of high-energy ions capable of destroying the collector. In addition, for the first time, high conversion efficiency was proved when working with a continuous xenon jet, which opens up prospects for the use of a multi-silowatt laser.
For this demonstration unit, a specialized solid-state laser with diode pumping based on Yb: YAG crystals is being developed at the FPI RAS. It will replace a commercial low-power laser and allow resource tests: to assess the life of the nozzle, the degree of pollution and degradation of the collector, as well as simulate the parameters necessary for a full-fledged industrial lithograph[1]


