CTF-based 4D NAND Flash

2018: Announcement

In November, 2018 SK Hynix announced as the company claims, first-ever a flash memory 4D NAND. Under this marketing name 96-layer memory of TLC NAND in which CTF technologies are combined (Charge Trap Flash is a cell with a charge trap) and PUC disappears (Periphery Under Cell is carrying out of peripheral chains under storage cells).

Thus, memory 4D of NAND flash assumes not only multilayer configuration, but also placement of peripheral chains in layers. Such design features allowed to make chips more compactly and quicker.

SK Hynix released first-ever a flash memory 4D NAND. SSD will become quicker and more compactly

So, die sizes decreased on a third in comparison with 72-layer memory 3D TLC of NAND, and the number of chips on a plate grew half. Speed of a read and write of data increased by 25% and 30% respectively, capacity of lines of input-output reached 1200 Mbps counting on one line at the supply voltage of 1.2 V. Density of a crystal is 512 Gbit.

SK Hynix industry-first integrated 3D CTF with PUC that differs from a method of integration of floating gates 3D and PUC. The best performance measures in the market and productivity are as a result reached. The company called the product CTF-based 4D NAND Flash to distinguish it from modern NAND flash 3D technologies, said in the press release of the company.

As a technical basis the TLC technology storing three bits on storage cell is still used. It is not absolutely clear yet when producers pass to QLC NAND. This technology would allow to increase data storage density even stronger.

SK Hynix is going to start mass deliveries of memory 4D of NAND flash until the end of 2018. The first solid state drives based on such chips should appear quickly enough.^[1]

Besides, in 2019 the South Korean company intends to start serial production of similar chips of 1 Tbit. Also it is announced plans for release of client solid state drives with a capacity up to 1 Tbyte based on own SK Hynix controllers.

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