MIT: 3D transistors

History

2024: Technology Development

In early November 2024, American researchers at the Massachusetts Institute of Technology (MIT) reported the development of highly efficient 3D transistors based on ultra-thin semiconductor materials. Products of a new type are superior in performance to silicon elements.

Traditional silicon transistors function as electronic switches. Under the influence of voltage, electrons pass through the energy barrier, causing a change in the state of the element from off to on. This allows binary calculations to be performed. The efficiency of the transistor is related to its switching steepness: the steeper the switching curve, the less voltage is needed to turn on. This means that the transistor can turn on and off faster, requiring less time and less power. However, a fundamental limitation known as Boltzmann tyranny imposes minimal voltage requirements for the transistor to operate at room temperature. American scientists have proposed a way to solve the problem.

𝓲

interestingengineering.com

The new transistors use ultra-thin semiconductor materials and quantum mechanics to achieve high performance at low voltage. Components based on gallium antimonide and indium arsenide are used. In addition, the principles of quantum tunneling are involved, so that electrons can penetrate potential barriers. The three-dimensional design of the articles includes heterostructures of nanowires with a diameter of only 6 nm.

As a result, the smallest 3D transistors were allegedly created (at the beginning of November 2024). According to the developers, such elements provide a 20-fold improvement in performance compared to similar tunnel transistors.^[1]

Notes