Micron: Power IGBT and FRD crystals

2023: Power IGBT and FRD Crystal Presentation

Micron on April 12, 2023 introduced its own power IGBT and FRD crystals used in electric transport control systems, power and safety.

The functionality of electronic devices of any purpose directly depends on the development of the electronic component base (ECB) of power electronics, the quality and characteristics of semiconductors and modules based on them.

As part of Micron's development work, a high-voltage high-current insulated gate bipolar transistor (IGBT) made of 4500V 75A and a fast-recovery diode (FRD) 4500V 150A was developed and tested. The crystals were developed using SPT technology, which made it possible to reduce the thickness of the product from 625 microns to 580 microns and increase its rated current.

The products are the basic element of the main electronic devices, ranging from household and telecommunication equipment, pumping and elevator infrastructure of housing and communal services, electric transport, railway transport to powerful power plants of Arctic icebreakers and control units of nuclear reactors.

This is a completely domestic development, at the output we have products with electrical parameters that are not inferior to foreign counterparts. The products are in demand on the market, used for the production of key electrical equipment in strategically important areas - the oil and gas production industry, safety, power, transport and mechanical engineering, - commented Evgeny Shmakov, chief designer of Micron JSC. - The use of Russian products will protect the national critical infrastructure from foreign influence.

The transition to electronic control of engines based on IGBT and SiC MOSFET transistors increases the power of installations, increases energy efficiency and increases the life of the electric motor.

Products are in the stage of mastering serial production.