Samsung Electronics HBM series memory Modules

2020: Release of HBM2E of third generation

The Samsung Electronics company announced on February 4, 2020 release on the Flashbolt market, high-performance memory of third generation 2E (HBM2E). the 16-gigabyte (GB) module HBM2E is suitable for high-performance computing systems (HPC) and helps to improve timely supercomputers for analytics of data on the basis of artificial intelligence and work with graphics.

Memory of Flashbolt has twice bigger capacity in comparison with the previous generation of HBM2 Aquabolt of 8 GB and also essential the increased performance and energy efficiency. Volume of 16 GB is reached due to vertical placement on a matrix of eight layers of 16-gigabit DRAM chips of a class of 10 nanometers. Then HBM2E modules connect among themselves to the help more than 40,000 end-to-end silicon microscopic openings, at the same time each 16-gigabit crystal supports them more than 5,600.

Flashbolt provides high data transfer rate of 3.2 Gbps thanks to the patented optimized transmission scheme of signals therefore capacity of each stack of 410 GB / page is reached. Maximum speed of data transmission on Samsung HBM2E – 4.2 Gbps, and the maximum tested data transfer rate for February 4, 2020 (peak throughput in some future applications) is 538 GB / with on a stack. It is 1.75 times higher, than 307 GB / with at Aquabolt.

Samsung will start serial production of this memory in the first half of the year 2020. At the same time the company will continue to release a line of Aquabolt of the second generation and will start release of Flashbolt of third generation.