Toshiba: TK series MOS transistors

Toshiba a TK series — a line of MOS transistors.

2018: TK1K9A60F, TK1K2A60F, TK750A60F и TK650A60F

On March 28, 2018 the Toshiba Electronics Europe company announced the beginning of release of a series of planar MOS transistors on 600 V with designation "π MOS-IX". A series is intended for the small and medium switch mode power supplies similar to used in portable PCs, adapters of alternating current, video game consoles and the lighting systems.

π-MOS IX (2018) series

The π-MOS IX series uses the optimized structure of a crystal and provides decrease in peak level of electromagnetic interference on 5 dB in comparison with devices of the current generation (π-MOS VII series) when preserving the high level of efficiency. TK1K9A60F, TK1K2A60F, TK750A60F and TK650A60F with parameters of RDS(ON) from 1.9 to 0.65 Ohms will become the first devices in the π-MOS IX series. They have the same rated avalanche current and a direct current (ID) that allows to replace easily existing MOS transistors.

Devices are issued in the standard TO-220SIS body and provide to designers additional freedom, simplifying development of constructions using MOS transistors. The Toshiba company will expand the π-MOS IX series, offering additional devices on 600 V and also versions on 500 and 650 V.

2017: TK3R1P04PL, TK4R4P06PL и TK6R7P06PL

The Toshiba Electronics Europe company provided MOS transistors on 40 and 60 V on the basis of own technology process of formation of a groove of semiconductor devices of the last generation (U-MOS-IX-H).

MOS transistors on 40 and 60 with U-MOS-IX-H technology in the DPAK body

TK3R1P04PL, TK4R4P06PL and TK6R7P06PL MOS transistors can be controlled with the channel of n-type signals of the logic level of 4.5 V and have the ultralow resistance (RDS(ON)) abroach reaching only 3.1 megohms (at VGS = 10 V). Devices are issued in the compact DPAK body and perfectly direct current converters, power sources and drives of electric motors are suitable for application in highly effective power converters, including alternating current converters in permanent.

TK3R1P04PL represents the MOS transistor on 40 V with the maximum RDS(ON) of 3.1 megohms and a maximum current of a drain (ID) 58 A (at a temperature of 25 °C). TK4R4P06PL and TK6R7P06PL are expected 60 V and have the maximum values of RDS(ON) and ID of 4.4 megohms and 58 A and 6.7 megohms and 46 A respectively.

Construction of all MOS transistors ensures functioning with a low output charge for further optimization of efficiency and performances.