Toshiba BiCS Flash on the basis of QLC

Toshiba BiCS Flash on the basis of QLC is the data storage device on the basis of own 3D technology a flash memory with four-level cells (QLC).

2020: Development of fifth generation three-dimensional BiCS Flash flash memory

On January 31, 2020 the Kioxia Europe company announced completion of development of fifth generation three-dimensional (3D) flash memory of BiCS FLASH with 112-layer vertical structure. Kioxia is going to begin deliveries of the first working samples of the device with a capacity of 512 gigabits (64 gigabytes) created using TLC technology (triple-level cell, three bits on a cell), in the first quarter 2020. According to Kioxia development will help to meet constantly growing demand for additional tanks for a broad spectrum of situations, from traditional mobile devices, consumer and corporate solid state drives, to new methods of application which arise with development of 5G networks and artificial intelligence, distribution of autonomous vehicles.

In further Kioxia is going to apply technology of fifth generation in devices of bigger capacity, on 1 terabit (128 gigabytes) using TLC and 1.33 terabits using QLC (quadruple-level cell, four bits on a cell).

According to the statement of the developer, the innovation 112-layer structure of Kioxia in combination with advanced schematics and the advanced production technologies allows to receive approximately for 20% more high density of cells in comparison with 96-layer structure of the previous generation. Thus it was succeeded to reduce memory cost in recalculation by one bit and at the same time to increase the capacity of the made memory at the rate on one silicon plate. Besides, the speed of work of the interface increases by 50%, performance increases during programming, the delay when reading is reduced.

From the moment of the announcement of a prototype a 3D flash memory in 2007, Kioxia continues to develop this technology and actively advances BiCS FLASH to meet demand for high capacities for data storage using crystals of the smaller size.

Fifth generation of BiCS FLASH was developed together with the technology and production partner — Western Digital Corporation company. Its production will be organized at Kioxia factory in Yokkaichi and at the plant in Kitakami.

2018: Advanced development

On August 31, 2018 the Toshiba Memory Europe company announced advanced development 96-layer BiCS FLASH flash memory.

According to the company, the QLC technology provides increase in quantity data bit in storage cell from three to four, significantly expanding capacity. The device has amount of memory – 1.33 TB on one crystal and is developed together with Western Digital Corporation company.

It also allows to reach capacity 2.66 TB in one body due to use of a multi-tier architecture from 16 crystals. The amounts of data created by mobile terminals and similar devices continue to grow thanks to distribution of social networks and development of Internet of Things (IoT). At the same time growth of requirement to analyze and use these data in real time is expected. For this purpose faster hard drives and storages of bigger capacity will be required. Devices on the basis of QLC technology and 96-layer technology process will help to solve this problem.

As it was reported, Toshiba the Memory company will begin deliveries of fact-finding samples to producers SSD-disks and controllers of SSD disks for assessment at the beginning of September, 2018, and the beginning of serial production is expected in 2019.