Toshiba TPH and TPN series MOS transistors

Toshiba TPH and TPN series — lines of MOS transistors.

2018

TPHR7904PB и TPH1R104PB

On May 11, 2018 the Toshiba Electronics Europe company announced release of two MOS transistors in the miniature body with a low resistance of SOP Advance (WF) the sizes of 5 mm x 6 mm as addition of a series of powerful MOS transistors on 40 V with the channel of n-type for automobile devices. TPHR7904PB and TPH1R104PB transistors are certified according to requirements of AEC-Q101 and intended for the different automobile systems, including electroamplifiers of steering (EUR), load switches, electric pumps, fans, etc.

Toshiba TPHR7904PB and TPH1R104PB MOS transistors

MOS transistors are issued using modern technology process of formation of a groove of the ninth generation of U-MOS IX-H in the miniature body with a low resistance and have the low resistance (RDS(ON)) abroach up to 0.79 megohms (max. value at VGS=10 V), thereby reducing losses of conductivity. Devices have rated voltage between a drain and a source (VDSS) of 40 V and can manage a drain current (ID) up to 150 A direct currents. Use of U-MOS IX-H technology also reduces noise when switching, helping to reduce the level of electromagnetic interferences.

In the SOP Advance (WF) body the construction of outputs with the moistened lateral surface allowing to exercise automatically visual control of soldering on printed circuit boards that is the key requirement of ensuring quality control in automotive industry is used noted in Toshiba Electronics Europe.

TPH3R70APL и TPN1200APL

On February 22, 2018 the Toshiba Electronics Europe company announced expansion of the range of MOS transistors on the basis of two devices on 100 V supplementing a series of low-voltage powerful MOS transistors with the channel of n-type on the basis of U-MOS IX-H technology. Devices are suitable for work in power sources of industrial equipment and also in management systems for electric motors.

The MOS transistor with the channel of n-type on 100 V (2018)

TPH3R70APL and TPN1200APL devices are manufactured using the most modern process of the formation of a groove of low-voltage U-MOS IX-H transistors allowing to optimize structure of elements and have the lowest in the industry and a class resistance abroach: 3.7 and 11.5 megohms respectively. Devices have a low output charge (QOSS: 74 and 24 nkl), low charge of switching of a lock (QSW: 21 and 7.5 nkl) also support management of the logic levels of 4.5 V.

In comparison with the existing devices on the basis of technology process of U-MOS VIII-H vustroystvo it was succeeded to lower the key indicators defining quality of operation of MOS transistors in impulse circuits such as RDS(ON), Qoss and RDS(ON), QSW.

TPH3R70APL is issued in the SOP Advance body of 5 mm x 6 mm in size and has a permissible current of a drain (ID) 90 A.

TPN1200APL is issued in the TSON Advance body of 3 mm x 3 mm in size and has a permissible current of a drain (ID) 40 A.

2017: TPH1R204PB

On November 21, 2017 the Toshiba Electronics Europe company announced expansion of the range of MOS transistors on the basis of own technology production process of semiconductor devices with vertical channel U-MOS-IX-H. The company provided the compact device on 40 V with the built-in diode with soft recovery (SRD).

U-MOS-IX-H MOSFET, (2017) MOS transistor

The built-in diode with soft recovery as a part of the TPH1R204PB MOS transistor allows to minimize the surge voltages arising between a drain and a source when switching. Such MOS transistor is suitable for work in synchronous rectifiers on the party of secondary voltage of pulse power supplies with strict requirements to the level of electromagnetic interferences.

Target scopes of the device:

• highly effective alternating current converters in permanent
• direct current converters,
• drives of electric motors, for example, in accumulator tools.

TPH1R204PB represents the device with the channel of n-type and the maximum resistance (RDS(ON)) abroach of 1.2 megohms (at VGS = 10 V). The nominal output charge (QOSS) makes 56 nkl. The device is issued in the SOP Advance body the sizes of 5 mm x 6 mm x 0.95 mm.