MRAM (magnetoresistive random access memory)
MRAM (magnetoresistive random access memory) is a digital memory technology that combines the advantages of traditional semiconductor and magnetic technologies. MRAM chips have the advantages of well-known types of memory - DRAM, SRAM and Flash - and at the same time lack many of their disadvantages. Data in MRAM is not written using electric charges, but using magnetic polarization of memory elements, which provides an important property for this type of memory - non-volatile, that is, the ability to store data written to cells even in the event of a power outage. MRAM chips combine low power consumption, high speed and almost unlimited read and write cycles of DRAM memory with Flash nonvolatile independence.
The creation of miniature MRAM chips was largely made possible by the discovery in 1988 of the effect of giant magnetic resistance, for which in 2007 physicists Albert Fer and Peter Grunberg were awarded the Nobel Prize. In the mid-1990s, several companies began intensive MRAM development at once, among which Motorola succeeded, releasing in 2005 the first 1 Mbit chip, created according to 180 nanometer standards. However, only Crocus Technology has currently managed to create a valid 130-nanometer chip and demonstrate the possibility of producing 90-nanometer magnetoresistive memory using thermal switching technology.
Thermal Assisted Switching (TAS) is a technology developed by Crocus Technology and protected by patents, in which recording is carried out when the memory cell is heated.
See also
- DRAM Memory (Global Market)
- 3D NAND Flash Memory
- NVRAM Non Volatile Random Access Memory
- Ferroelectric RAM, FeRAM, FRAM
- ReRAM - Resistive Random Access Memory
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