ReRAM - Resistive Random Access Memory

Memristors need less energy to work, are faster than modern solid state drives and can save information even when the power is turned off. Memristor (abbreviated from the English 'memory resistor' - "memory resistor") was proposed as the fourth main element of the electrical circuit by Professor of the University of California (Berkeley) Leon Chua in 1971. and was first implemented in practice by the developers of the HP Laboratories, the main research division of the company, in 2006.

In early 2010, HP Labs researchers reported a discovery that memristors could also perform logical operations. This allows us to believe that devices based on memristors can change the existing data processing paradigm using a separate central processor, allowing in the future to perform similar operations directly on chips that store information.

2024: Russia has created a platform for the production of memory working without electricity

In early March 2024, Russian specialists from the National Center for Physics and Mathematics (NCPM) announced the development of a single technological platform for integrating memristor devices into the domestic process of producing modern silicon chips. Thus, in the Russian Federation, an opportunity has been created to develop the direction of RRAM memory.

RRAM technology involves the creation of resistive random access memory. The essence of the technique is that dielectrics, which in the usual state have a very high resistance, after applying a certain voltage can form low resistance conductive threads inside themselves, and thus turn into a conductor.

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Russian scientists have developed and implemented the topology of an integrated circuit for the production of engergonvolatile RRAM memory based on a combination of traditional silicon technology in terms of control circuits and new information storage technologies developed as part of the scientific program of the NCPM. The new technique makes it possible to use the upper layers of metallization in classic silicon microchips to place memristors in them. This is a passive electrical element capable of changing its resistance depending on the electric charge flowing through it.

According to TASS, referring to the statements of Russian scientists, memristors can be used to create analogues of nerve endings. They can also be used as the basis for very economical, but at the same time fast memory, which combines non-volatile flash drives and high RAM speed.

The resistance of the memristor can vary depending on the electric charge passed through it, that is, the memristor "remembers" the amount of charge passed through it and stores this information in the form of its resistance. Such properties of the memristor open up the possibility of creating long-term memory cells and systems for "computing in memory" on its basis, and memristor memory elements can be more compact and faster than elements of modern flash memory, "says Academician of the Russian Academy of Sciences Igor Kalyaev, co-chairman of scientific areas of the NCPM.[1]

See also

• DRAM Memory (Global Market)
• 3D NAND Flash Memory
• NVRAM Non Volatile Random Access Memory
• Ferroelectric RAM, FeRAM, FRAM
• MRAM (magnetoresistive random access memory)

Notes