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Krasnikov Gennady Yakovlevich
Krasnikov Gennady Yakovlevich

Biography

Born April 30, 1958 in Tambov.

In 1981 he graduated from the Faculty of Physics and Technology of the Moscow Institute of Electronic Technology with a degree in Automation and Electronics[1]

Scientific activity

In 1990 he defended his thesis.

In 1996 he defended his doctoral dissertation.

In 1997, he was elected a corresponding member of the Russian Academy of Sciences in the Department of Informatics, Computer Engineering and Automation (computer technology and element base).

In 1998, he was awarded the title of professor.

Doctor of Technical Sciences, Professor.

In 2008, he was elected Academician of the Russian Academy of Sciences in the Department of Nanotechnology and Information Technologies (Micro- and Nanoelectronics).


In 1981, he worked as the released secretary of the Komsomol committee of NIIME and the Micron plant.

In 1983, he received the position of lead engineer of the laboratory.

In 1984 he was appointed head of the workshop of the Mikron plant.

In 1987 he became deputy chief engineer of the Micron enterprise.

In 1988, he took the position of Deputy Director for Production, Commercial Director of the Micron plant.

1998: General Director of Concern Scientific Center

From 1998 to 2000, as General Director, he was headed by Concern Scientific Center OJSC.

2000: Chairman of the Board of Directors "Concern Scientific Center"

In 2000, he became the official director and at the same time chairman of the Board of Directors of Concern Scientific Center OJSC.

In 2003, he received the position of general designer, scientific director of Concern Scientific Center OJSC (in 2004 it was renamed SITRONICS OJSC).

2005: Director General of NIIME and Micron

In 2005, he became General Director of NIIME and Micron OJSC, Vice President of SITRONICS OJSC, Head of the Microelectronics Business Area of ​ ​ SITRONICS OJSC.

2016: Chairman of the Micron Board of Directors

In April 2016, the Board of Directors of OJSC NIIME and Micron by its decision appointed Gulnara Khasyanova as the General Director of Micron. Gennady Krasnikov took the position of Chairman of the Board of Directors of the company. He also continues to work as General Director of JSC "Research Institute of Molecular Electronics." Being the general director of JSC "Research Institute of Molecular Electronics," Krasnikov is engaged in the development of a scientific school in the field of research and development of technologies for creating integrated circuits.

2020: Member of the Commission on Personnel Issues of the Presidential Council on Science and Education

On July 16, 2020, the Presidium of the Presidential Council on Science and Education approved the composition of the Commission on Personnel Issues, which included the General Director of NIIME JSC (part of the Element Group of Companies), Academician of the Russian Academy of Sciences Gennady Krasnikov.

The Commission on Personnel Issues of the Council under the President of the Russian Federation on Science and Education was created to increase efficiency in the selection of leading personnel in scientific organizations under the jurisdiction of the Federal Agency for Scientific Organizations (FANO) and operates on a voluntary basis. The Chairman of the Commission is approved by the President of the Russian Federation The activities of the Commission are provided by the Office of the President of the Russian Federation for Scientific and Educational Policy. The Commission considers candidates for the position of directors of scientific organizations under the jurisdiction of the FANO of Russia, checks the absence of restrictions on the occupation of senior positions, the level of qualification, the correspondence of the preparation of the candidate for the position.

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"In Russia, a scientific and technological reserve has been created for the development of nano- and microelectronics, as well as design centers that solve industry problems. A serious challenge for the industry is the personnel potential, compliance of professional competencies of specialists with the qualification requirements. Therefore, it is important that the leadership of education and science include real professionals who can ensure the further development of domestic science and technology. The appointment of Academician G.Ya. Krasnikov to the Commission on Personnel Issues is not only a high assessment of his scientific merits and professional experience, but also a guarantee of increasing the efficiency of the selection of senior personnel for domestic scientific and educational organizations, "said Oksana Kukharchuk, board member, vice president for personnel management of the Element Group of Companies.
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2022: Elected new head of RAS

On September 20, 2022, Gennady Krasnikov was elected the new president of the Russian Academy of Sciences (RAS). In addition to the former general director of Micron, the post was claimed by the director of the Federal State Budgetary Institution Institute of Thermophysics named after S. S. Kutateladze SB RAS, academician Dmitry Markovich. The day before, the current president of the academy, Alexander Sergeyev, withdrew his candidacy from the elections due to "pressure."

According to the results of the voting within the framework of the general meeting of members of the Russian Academy of Sciences, Gennady Krasnikov received 871 votes, Dmitry Markovich - 397 votes. 122 ballots were invalidated. The elections were recognized as valid, since by the second day of the general meeting 1070 members of the Russian Academy of Sciences registered to participate in the secret ballot. Thus, the necessary quorum was collected. The minimum number of voting participants is 1005 people from 2008 members of the RAS.

The new head of the Russian Academy of Sciences Gennady Krasnikov "

Shortly before the elections, in an interview with Kommersant, Krasnikov stated that the RAS should not only engage in fundamental research, but also build interaction with applied science and manufacturers.

{{quote 'The most promising form of integration of academic, applied, university science and high-tech business should be consortia, including academic and applied research institutes, universities, business structures, as well as innovative enterprises based on the development of academic institutions, - noted Krasnikov. }} On September 20, 2022, he stated that the main task of the Russian Academy of Sciences today is to ensure the technological independence of countries.

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The main thing today is to quickly establish communication with government structures in order to see how the Academy of Sciences can work more efficiently, especially in today's conditions, including for the task of technological independence of the country, he said. [2]
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Equity interest

Since July 29, 2009, Krasnikov's share in the capital of SITRONICS OJSC increased as a result of the option program to 1.824% (previously 1.726%).

As of April 4, 2018, Gennady Yakovlevich Krasnikov works as the head of the Sitronics Microelectronics business area of ​ ​ the Sitronics concern, general designer of NIIME and Micron OJSC, general director of NIIME OJSC.

Achievements

In 2007, he joined the Presidential Council on Science, Technology and Education[3].

Since 2010 - Member of the Advisory Scientific Council of the Skolkovo Foundation.

Member of the EMEA Leadership Council of the Global Semiconductor Manufacturers Alliance (GSA).

Founder of the Non-Profit Organization "Fund for the Promotion of International Cooperation"[4]

Member of the editorial boards of the journals Microelectronics and Electronics: Science, Technology, Business.

In February 2012, Gennady Krasnikov became a confidant of presidential candidate Vladimir Putin.

Head of the Department of Submicron Technology of the SBIS of the Federal State Autonomous Educational Institution of Higher Professional Education "National Research University" MIET[5].

Under his leadership, 3 doctoral and 7 master's theses were defended[6] of the[6]

Member of the Board of Trustees of the Alferovsky Fund[7]

Skolkovo[8], a member of the Council of the non-profit organization "Development Fund of the Center for the Development and Commercialization of New Technologies," approved as part of the project to create an innograd[8]

Membership in the Russian Academy of Sciences

Since May 30, 1997 - Corresponding Member of the Russian Academy of Sciences (Department of Informatics, Computer Engineering and Automation (specialty - Computer Engineering and Element Base).

Since May 29, 2008 - Academician of the Russian Academy of Sciences (Department of Nanotechnology and Information Technologies (Micro- and Nanoelectronics).

Social activities

Member of the Jury at the Meeting of Partners of the International Competition of Business Journalism "Pressvania," which will be held in the Public Chamber of the Russian Federation on March 5, 2013[9].

Scientific activity

Scope of scientific activity: development and creation of ultra-large integrated circuits (SBIS), system integration of their design and manufacture routes based on general physical and technological principles that ensure the unification of these technologies[6]

An expert in the field of micro- and nanoelectronics, the development of a structural and technological basis for computer components, the creation of ultra-large integrated circuits (VLSI) and the problems of ensuring the quality of their industrial production.

Gennady Krasnikov created a complex of original scientifically substantiated technical solutions covering the entire technological route for the manufacture of CMOS microcircuits, which are the basis of the modern theory of the formation of the SBIS element base, where the patterns of the occurrence and behavior of background impurities are determined, both along the boundaries of the components of the metal-oxide-silicon systems, and throughout the system as a whole in the manufacture of microcircuits with minimal topological dimensions from 180 nm to 65 nm. The modern theory of stabilization of electrical parameters of integrated circuits has been formed[6]

Publications

The author of 279 scientific papers, 36 inventions and developments in the field of chip development - an element base of modern computer technology and electronics, 3 monographs. Scientific works are devoted to the creation of ultra-large integrated circuits (SBIS) and the problems of ensuring the quality of their industrial production.

Monographs:

  • "Structural and technological features of submicron MOSFETs" (M.: Technosphere. In 2 vols., 2002-2004);

  • "Silicon-silicon dioxide system of submicron SBIS" (co-authored with N.A. Zaytsev, M.: Technosphere, 2003) and other[3].

Patents

1) Structure and method of producing integrated auto-emission elements with emitters based on nanodiamond coatings - invention relates to electronic engineering and can be used in making vacuum microelectronics devices;

2) Composition of gas mixture for formation of tantalum metal gate nitrides by plasma etching method - invention relates to semiconductor manufacturing technology, in particular, to formation of gates in CMOS technology;

3) Chemical-dynamic polishing method - invention relates to problems of chemical-dynamic polishing of a material and can be used for processing metal, dielectric, semiconductor and their compounds;

4) Method of manufacturing copper multi-level metallization of SBIS - invention relates to the technology of manufacturing multi-level metallization of integrated circuits;

5) Method of making a silicon structure on an insulator The invention relates to a method of making single crystal silicon films on an insulator;

6) Method of producing high purity silicon granules - invention relates to the field of non-ferrous metallurgy, in particular, to the production of high purity silicon, which can be used in the manufacture of solar cells;

7) Structure and method of manufacturing field emission elements with carbon nanotubes used as cathodes - invention relates to vacuum microelectronics devices, in particular, to field emission elements with carbon nanotubes used as cathodes: triodes, diodes and devices based on them, field emission displays, vacuum microelectronic current switches;

8) Method of producing high purity silicon - invention relates to the field of non-ferrous metallurgy, in particular, to the production of high purity silicon, which can be used in the manufacture of solar cells;

9) Vacuum integrated microelectronic device and method of its manufacture - the invention relates to vacuum integrated microelectronic devices with vertical cathodes and the reverse location of electrodes relative to the substrate and devices based on them: vacuum integrated circuits, vacuum microelectronic current switches, field emission displays;

10) Matrix of field emission cathodes with gates (versions) and method of its manufacture - invention relates to devices of vacuum microelectronics, in particular, to matrices of field emission cathodes with gates and devices based on them: field emission displays, vacuum microelectronic current switches[10].

Awards and titles

  • Order of Merit for the Fatherland, IV degree (2008).
  • Order of Honor and Order of Friendship (2014).
  • Laureate of the State Prize of the Russian Federation in the field of science and technology (2014)
  • Twice winner of the Prize of the Government of the Russian Federation in the field of science and technology (1999 and 2009).


1997 - awarded the medal "In memory of the 850th anniversary of Moscow"[3].

1996 - awarded the Silver Medal of the International Salon of Inventions "Eureka - Brussel '96."

1997 - awarded the Gold and Silver Medals of the International Salon of Inventions "Eureka - Brussel '97."

2000 - awarded 4 Silver Medals of the International Salon of Inventions "Eureka - Brussel '2000[6]."

Interesting facts

In 1979, in his 4th year, he prepares his first scientific works. Speaking for MIET, more than once takes first places at the All-Russian student conferences[3].

Hobbies

Fond of photography, collects rare cameras[3].

Family

Married. Wife - Krasnikova Svetlana Anatolyevna (born in 1963). Son, Krasnikov Andrei Gennadievich (born in 1986), master's student of the Moscow State Institute of Electronic Technology.

Daughter, Polina (born 2003).

Notes