Owners
History
2023: Joining the Kurchatov Institute
Prime Minister Mikhail Mishustin signed an order to join the Institute for Design Problems in Microelectronics (IPPM RAS, Zelenograd) to the Kurchatov Institute National Research Center. The corresponding document was published on October 13, 2023.
The reorganization of the Center and the federal state budgetary institution of science The Institute for Design Problems in Microelectronics of the Russian Academy of Sciences will be carried out within the budget allocations provided for in the federal budget to ensure their activities, the order says. |
It also follows from it that the name and main goals of the work of the IPPM after joining the Kurchatov Institute will not change. The decree states that the Ministry of Science and Higher Education of the Russian Federation and the Federal Property Management Agency will be responsible for carrying out measures related to the reorganization within six months, the document says.
Directions of basic scientific research IPPM:
- design automation systems in micro- and nanoelectronics;
- methodology for designing integrated circuits and systems of high complexity;
- high-performance computing systems.
Government of the Russian Federation Order of October 12, 2023 No. 2815-r
1986-1998
The Institute for Design Problems in Microelectronics of the Russian Academy of Sciences was created in 1986. Until April 1998, it acted as the Scientific Research Institute of Computer-Aided Design Systems for Radioelectronic Equipment and Ultra-Large Integrated Circuits of the Russian Academy of Sciences (NIISAPRAN). The main areas of the institute's work are research on automation systems, mathematical models and methods for developing complex systems in micro- and nanoelectronics, as well as the development of high-performance microelectronic computing systems, promising devices in this area and other problems.
The site content is translated by machine translation software powered by PROMT. The machine-translated articles are not always perfect and may contain errors in vocabulary, syntax or grammar. Read original article If you find inaccuracies or errors in the results of machine translation, please write to editor@tadviser.ru. We will make every effort to correct them as soon as possible. |